| PART |
Description |
Maker |
| GT40J121 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT30J341 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| SG35N12T SG35N12DT |
Discrete IGBTs
|
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| SG50N06D3S SG50N06D2S |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
ETC[ETC]
List of Unclassifed Manufacturers
|
| SG50N06T SG50N06DT |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
ETC[ETC]
List of Unclassifed Manufacturers
|
| IXBH16N170 IXBT16N170 |
Discrete IGBTs
|
IXYS
|
| SG15N12DP SG15N12P |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
